![Materials | Free Full-Text | Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor | HTML Materials | Free Full-Text | Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor | HTML](https://www.mdpi.com/materials/materials-12-00428/article_deploy/html/images/materials-12-00428-g001.png)
Materials | Free Full-Text | Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor | HTML
![Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor | SpringerLink Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1557%2FS1092578300003288/MediaObjects/43583_1999_400100114_Fig1a.jpg)
Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor | SpringerLink
![Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes - RSC Advances (RSC Publishing) DOI:10.1039/D0RA01900C Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes - RSC Advances (RSC Publishing) DOI:10.1039/D0RA01900C](https://pubs.rsc.org/image/article/2020/RA/d0ra01900c/d0ra01900c-f1_hi-res.gif)
Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes - RSC Advances (RSC Publishing) DOI:10.1039/D0RA01900C
![Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes | Scientific Reports Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes | Scientific Reports](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41598-019-38664-x/MediaObjects/41598_2019_38664_Fig1_HTML.png)
Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes | Scientific Reports
Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence
![Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density | Nanoscale Research Letters | Full Text Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density | Nanoscale Research Letters | Full Text](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs11671-021-03557-4/MediaObjects/11671_2021_3557_Fig9_HTML.png)
Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density | Nanoscale Research Letters | Full Text
![Schematic of a GaN LED structure on sapphire with TCO p-type contact on... | Download Scientific Diagram Schematic of a GaN LED structure on sapphire with TCO p-type contact on... | Download Scientific Diagram](https://www.researchgate.net/publication/323243993/figure/fig1/AS:779415843766303@1562838626364/Schematic-of-a-GaN-LED-structure-on-sapphire-with-TCO-p-type-contact-on-top-and-b.gif)